Boron nitride substrates for high-quality graphene electronics
arXiv:1005.4917 · doi:10.1038/nnano.2010.172
Abstract
Graphene devices on standard SiO2 substrates are highly disordered, exhibiting characteristics far inferior to the expected intrinsic properties of graphene[1-12]. While suspending graphene above the substrate yields substantial improvement in device quality[13,14], this geometry imposes severe limitations on device architecture and functionality. Realization of suspended-like sample quality in a substrate supported geometry is essential to the future progress of graphene technology. In this Letter, we report the fabrication and characterization of high quality exfoliated mono- and bilayer graphene (MLG and BLG) devices on single crystal hexagonal boron nitride (h-BN) substrates, by a mechanical transfer process. Variable-temperature magnetotransport measurements demonstrate that graphene devices on h-BN exhibit enhanced mobility, reduced carrier inhomogeneity, and reduced intrinsic doping in comparison with SiO2-supported devices. The ability to assemble crystalline layered materials in a controlled way sets the stage for new advancements in graphene electronics and enables realization of more complex graphene heterostructres.
20 pages (includes supplementary info), 7 figures
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Cited by in corpus (16)
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- STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
- Hunting for Monolayer Boron Nitride: Optical and Raman Signatures
- Multicomponent fractional quantum Hall effect in graphene
- Giant Nonlocality near the Dirac Point in Graphene
- Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene
- Stability of boron nitride bilayers: Ground state energies, interlayer distances, and tight-binding description
- Quantized conductance of a suspended graphene nanoconstriction
- Local Compressibility Measurements of Correlated States in Suspended Bilayer Graphene
- Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics
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- Interactions and magnetic moments near vacancies and resonant impurities in graphene
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