Optical Probing of Electronic Interaction between Graphene and Hexagonal Boron Nitride

Abstract

Even weak van der Waals (vdW) adhesion between two-dimensional solids may perturb their various materials properties owing to their low dimensionality. Although the electronic structure of graphene has been predicted to be modified by the vdW interaction with other materials, its optical characterization has not been successful. In this report, we demonstrate that Raman spectroscopy can be utilized to detect a few % decrease in the Fermi velocity (vF) of graphene caused by the vdW interaction with underlying hexagonal boron nitride (hBN). Our study also establishes Raman spectroscopic analysis which enables separation of the effects by the vdW interaction from those by mechanical strain or extra charge carriers. The analysis reveals that spectral features of graphene on hBN are mainly affected by change in vF and mechanical strain, but not by charge doping unlike graphene supported on SiO2 substrates. Graphene on hBN was also found to be less susceptible to thermally induced hole doping.

19 pages, 4 figures

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Cited by in corpus (10)

• Graphene on Hexagonal Boron Nitride
• Charge versus energy transfer in atomically-thin graphene-transition metal dichalcogenide van der Waals heterostructures
• Prospects of Direct Growth Boron Nitride Films as Substrates for Graphene Electronics
• Strain-engineering of twist-angle in graphene/hBN superlattice devices
• Probing the nanoscale origin of strain and doping in graphene-hBN heterostructures
• Varying Electronic Coupling at Graphene-Copper Interfaces Probed with Raman Spectroscopy
• Gate dependent Raman spectroscopy of graphene on hexagonal boron nitride
• Direction-Controlled Chemical Doping for Reversible G-Phonon Mixing in ABC Trilayer Graphene
• Electronic transport in a two-dimensional superlattice engineered via self-assembled nanostructures
• Redox and Molecular Diffusion in 2D van der Waals Space