Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering

Abstract

We demonstrate electrochemical top gating of graphene by using a solid polymer electrolyte. This allows to reach much higher electron and hole doping than standard back gating. In-situ Raman measurements monitor the doping. The G peak stiffens and sharpens for both electron and hole doping, while the 2D peak shows a different response to holes and electrons. Its position increases for hole doping, while it softens for high electron doping. The variation of G peak position is a signature of the non-adiabatic Kohn anomaly at $\Gamma$. On the other hand, for visible excitation, the variation of the 2D peak position is ruled by charge transfer. The intensity ratio of G and 2D peaks shows a strong dependence on doping, making it a sensitive parameter to monitor charges.

arXiv comment7 pages, 8 figures

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• Probing charged impurities in suspended graphene using Raman spectroscopy
• Surface Enhanced Raman Spectroscopy of Graphene
• Insights into vibrational and electronic properties of MoS${}_2$ using Raman, photoluminescence and transport studies
• Electricity Harvested from Ambient Heat across Silicon Surface
• Crystallogprahically selective nanopatterning of graphene on SiO2
• Revisiting THz absorption in GO and rGO liquid crystalline films
• Observation of Structure Evolution and Reaction Intermediates at the Gate-tunable Suspended Graphene/Electrolyte Interface
• Exploring the effect of varying regime of ion fluence on optical and surface electronic properties of CVD Grown Graphene
• Pseudomagnetic fields and strain engineering: graphene on GaN nanowires
• Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices
• Raman spectroscopy and imaging of graphene
• Theoretical limits of electron and hole doping in single layer graphene from DFT calculations
• Doping dependence of the Raman spectrum of defected graphene
• Infrared Spectroscopy of Wafer-Scale Graphene
• Reversible optical doping of graphene
• Insulating Electronic States Near the Dirac Point Arising from Twisted Stacking and Curvature in 3D Nanoporous Graphene
• Probing the Electrical Properties of Overlapped Graphene Grain Boundaries by Raman spectroscopy
• Ultra-low doping and local charge variation in graphene measured by Raman: experiment and simulation
• Second-order Overtone and Combinational Raman Modes of Graphene Layers in the Range of 1690 cm-1 to 2150 cm-1
• Solid-State Lifshitz-van der Waals Repulsion through Two-Dimensional Materials
• Raman Spectroscopy of Diesel and Gasoline Engine-Out Soot Using Different Laser Power