The control of graphene double-layer formation in copper-catalyzed chemical vapor deposition
arXiv:1208.5608 · doi:10.1016/j.carbon.2012.03.041
Abstract
The growth of graphene during Cu-catalyzed chemical vapor deposition was studied using 12CH4 and 13CH4 precursor gasses. We suggest that the growth begins by the formation of a multilayer cluster. This seed increases its size but the growth speed of a particular layer depends on its proximity to the copper surface. The layer closest to the substrate grows fastest and thus further limits the growth rate of the upper layers. Nevertheless, the growth of the upper layers continues until the copper surface is completely blocked. It is shown that the upper layers can be removed by modification of the conditions of the growth by hydrogen etching.
arXiv comment17 pages, 4 figures
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- Extended characterization methods for covalent functionalization of graphene on copper
- Large scale chemical functionalization of graphene with nanometer resolution
- Low entropy in graphene through the Co-C system