Growth of large-area single- and bi-layer graphene by controlled carbon precipitation on polycrystalline Ni surfaces
arXiv:0906.2236 · doi:10.1007/s12274-009-9059-y
Abstract
We report graphene films composed mostly of one or two layers of graphene grown by controlled carbon precipitation on the surface of polycrystalline Ni thin films during atmospheric chemical vapor deposition(CVD). Controlling both the methane concentration during CVD and the substrate cooling rate during graphene growth can significantly improve the thickness uniformity. As a result, one- or two- layer graphene regions occupy up to 87% of the film area. Single layer coverage accounts for 5-11% of the overall film. These regions expand across multiple grain boundaries of the underlying polycrystalline Ni film. The number density of sites with multilayer graphene/graphite (>2 layers) is reduced as the cooling rate decreases. These films can also be transferred to other substrates and their sizes are only limited by the sizes of the Ni film and the CVD chamber. Here, we demonstrate the formation of films as large as 1 in2. These findings represent an important step towards the fabrication of large-scale high-quality graphene samples.
References in corpus (10)
- Two Dimensional Atomic Crystals
- High yield production of graphene by liquid phase exfoliation of graphite
- Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
- Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
- Highly Conducting Graphene Sheets and Langmuir-Blodgett Films
- Making graphene visible
- Graphene-Based Liquid Crystal Device
- Graphene Segregated on Ni surfaces and Transferred to Insulators
- Raman spectra of epitaxial graphene on SiC and of epitaxial graphene transferred to SiO2
- Colors Of Graphite On Silicon Dioxide
Cited by in corpus (15)
- Graphene: A sub-nanometer trans-electrode membrane
- Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition
- Growth and properties of few-layer graphene prepared by chemical vapor deposition
- Raman and optical characterization of multilayer turbostratic graphene grown via chemical vapor deposition
- Casimir Forces and Graphene Sheets
- The control of graphene double-layer formation in copper-catalyzed chemical vapor deposition
- Single- and few-layer graphene growth on stainless steel substrates by direct thermal chemical vapor deposition
- The Critical Role of Substrate in Stabilizing Phosphorene Nanoflake: A Theoretical Exploration
- Epitaxial (111) Films of Cu, Ni, and Cu_y_2_3$(0001) for Graphene Growth by Chemical Vapor Deposition
- All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts
- Few-Layer MoS/a-Si:H Heterojunction pin-Photodiodes for extended Infrared Detection
- Substrate free synthesis of graphene nanoflakes by atmospheric pressure chemical vapour deposition using Ni powder as a catalyst
- Spin-polarized transport through domain wall in magnetized graphene
- Identification of a strong contamination source for graphene in vacuum systems
- An influence of parallel electric field on the dispersion relation of graphene - a new route to Dirac logics