Raman and optical characterization of multilayer turbostratic graphene grown via chemical vapor deposition
arXiv:1011.1683 · doi:10.1063/1.3605545
Abstract
We synthesize large-area graphene via atmospheric-pressure (AP) chemical vapor deposition (CVD) on copper, and transfer to SiO2 wafers. In contrast to low-pressure (LP) CVD on copper, optical contrast and atomic force microscopy measurements show AP-CVD graphene contains significant multi-layer areas. Raman spectroscopy always shows a single Lorentzian 2D peak, however systematic differences are observed in the 2D peak energy, width, and intensity for single- and multi-layer regions. We conclude that graphene multi-layers grown by AP-CVD on Cu are rotationally disordered.
13 pages, 4 figures + Supplemental Material of 11 pages, 4 figures
References in corpus (11)
- The Raman Fingerprint of Graphene
- Two Dimensional Atomic Crystals
- Making graphene visible
- Graphene Segregated on Ni surfaces and Transferred to Insulators
- Raman Fingerprint of Charged Impurities in Graphene
- Probing the Intrinsic Properties of Exfoliated Graphene: Raman Spectroscopy of Free-Standing Monolayers
- Growth of large-area single- and bi-layer graphene by controlled carbon precipitation on polycrystalline Ni surfaces
- Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition
- Few layer graphene on SiC, pyrolitic graphite and graphene: a Raman scattering study
- Raman spectra of misoriented bilayer graphene
- Raman and optical characterization of multilayer turbostratic graphene grown via chemical vapor deposition
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- AB-Stacked Multilayer Graphene Synthesized via Chemical Vapor Deposition: A Characterization by Hot Carrier Transport