Raman Fingerprint of Charged Impurities in Graphene
arXiv:0709.2566 · doi:10.1063/1.2818692
Abstract
We report strong variations in the Raman spectra for different single-layer graphene samples obtained by micromechanical cleavage, which reveals the presence of excess charges, even in the absence of intentional doping. Doping concentrations up to ~10^13 cm-2 are estimated from the G peak shift and width, and the variation of both position and relative intensity of the second order 2D peak. Asymmetric G peaks indicate charge inhomogeneity on the scale of less than 1 micron.
arXiv comment3 pages, 5 figures
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