Graphene-Silicon Layered Structures on Single-crystalline Ir(111) Thin Films
arXiv:1503.00392 · doi:10.1002/admi.201400543
Abstract
Single-crystalline transition metal films are ideal playing fields for the epitaxial growth of graphene and graphene-base materials. Graphene-silicon layered structures were successfully constructed on Ir(111) thin film on Si substrate with an yttria-stabilized zirconia buffer layer via intercalation approach. Such hetero-layered structures are compatible with current Si-based microelectronic technique, showing high promise for applications in future micro- and nano-electronic devices.
arXiv comment14 pages, 6 figures
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