Transfer-free electrical insulation of epitaxial graphene from its metal substrate

Abstract

High-quality, large-area epitaxial graphene can be grown on metal surfaces but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by a step-wise intercalation of silicon and oxygen, and the eventual formation of a SiO${}_2$ layer between the graphene and the metal. We follow the reaction steps by x-ray photoemission spectroscopy and demonstrate the electrical insulation using a nano-scale multipoint probe technique.

Accepted for publication in Nano Letters

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• Photoemission Investigation of Oxygen Intercalated Epitaxial Graphene on Ru(0001)
• Modulating charge density and inelastic optical response in graphene by atmospheric pressure localized intercalation through wrinkles
• Graphene-Silicon Layered Structures on Single-crystalline Ir(111) Thin Films
• Low Temperature Growth of Graphene on Semiconductor
• Degenerate epitaxy-driven defects in monolayer silicon oxide onto ruthenium
• Interfacial two-dimensional oxide enhances photocatalytic activity of graphene/titania via electronic structure modification
• Detecting the local transport properties and the dimensionality of transport of epitaxial graphene by a multi-point probe approach
• Quasi-free-standing single-layer WS2 achieved by intercalation