Quasi-free Standing Epitaxial Graphene on SiC by Hydrogen Intercalation

Abstract

Quasi-free standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the 6root3 reconstructed initial carbon layer and the SiC substrate. The topmost Si atoms which for epitaxial graphene are covalently bound to this buffer layer, are now saturated by hydrogen bonds. The buffer layer is turned into a quasi-free standing graphene monolayer with its typical linear pi-bands. Similarly, epitaxial monolayer graphene turns into a decoupled bilayer. The intercalation is stable in air and can be reversed by annealing to around 900 degrees Celsius.

Accepted for publication in Physical Review Letters

References in corpus (5)

• Control of graphene's properties by reversible hydrogenation
• Ab initio Study of Graphene on SiC
• Atomic Hole Doping of Graphene
• Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons
• Electron states of mono- and bilayer graphene on SiC probed by STM

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