Semiconducting graphene from highly ordered substrate interactions

Abstract

While numerous methods have been proposed to produce semiconducting graphene, a significant bandgap has never been demonstrated. The reason is that, regardless of the theoretical gap formation mechanism, disorder at the sub-nanometer scale prevents the required chiral symmetry breaking necessary to open a bandgap in graphene. In this work, we show for the first time that a 2D semiconducting graphene film can be made by epitaxial growth. Using improved growth methods, we show by direct band measurements that a bandgap greater than 0.5 eV can be produced in the first graphene layer grown on the SiC(0001) surface. This work demonstrates that order, a property that remains lacking in other graphene systems, is key to producing electronically viable semiconducting graphene.

References in corpus (6)

• Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
• Ab initio Study of Graphene on SiC
• Origins of anomalous electronic structures of epitaxial graphene on silicon carbide
• Imaging the interface of epitaxial graphene with silicon carbide via scanning tunneling microscopy
• The interface structure of epitaxial graphene grown on 4H-SiC(0001)
• The effect of the buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)

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