activity
20092018
most citedFirst direct observation of a nearly ideal graphene band structure

464 citations · 812 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.supr-con2018★ 7 cited

Atomic-layer-resolved composition and electronic structure of the cuprate BiSrCaCuO from soft x-ray standing-wave photoemission

Cheng-Tai Kuo, Shih-Chieh Lin, Giuseppina Conti +16

A major remaining challenge in the superconducting cuprates is the unambiguous differentiation of the composition and electronic structure of the CuO layers and those of the in…

cond-mat.mtrl-sci2017★ 3 cited

Spin-polarized quasi 1D state with finite bandgap on the Bi/InSb(001) surface

J. Kishi, Y. Ohtsubo, T. Nakamura +13

One-dimensional (1D) electronic states were discovered on 1D surface atomic structure of Bi fabricated on semiconductor InSb(001) substrates by angle-resolved photoelectron spectro…

cond-mat.mtrl-sci2015★ 180 cited

Semiconducting graphene from highly ordered substrate interactions

M. S. Nevius, M. Conrad, F. Wang +5

While numerous methods have been proposed to produce semiconducting graphene, a significant bandgap has never been demonstrated. The reason is that, regardless of the theoretical g…

cond-mat.mtrl-sci2013★ 36 cited

Wide-Gap Semiconducting Graphene from Nitrogen-Seeded SiC

Feng Wang, Gang Liu, Sara Rothwell +6

All carbon electronics based on graphene has been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the develop…

cond-mat.mtrl-sci2012★ 28 cited

High Van Hove singularity extension and Fermi velocity increase in epitaxial graphene functionalized by gold clusters intercalation

M. N. Nair, M. Cranney, F. Vonau +6

Gold intercalation between the buffer layer and a graphene monolayer of epitaxial graphene on SiC(0001) leads to the formation of quasi free standing small aggregates of clusters.…

cond-mat.mes-hall2011★ 30 cited

Silicon intercalation into the graphene-SiC interface

F. Wang, K. Shepperd, J. Hicks +11

In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room tem…

cond-mat.mes-hall2010★ 64 cited

Symmetry breaking in commensurate graphene rotational stacking; a comparison of theory and experiment

J. Hicks, M. Sprinkle, K. Shepperd +8

Graphene stacked in a Bernal configuration (60 degrees relative rotations between sheets) differs electronically from isolated graphene due to the broken symmetry introduced by int…

cond-mat.mtrl-sci2009★ 464 cited

First direct observation of a nearly ideal graphene band structure

M. Sprinkle, D. Siegel, Y. Hu +10

Angle-resolved photoemission and X-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(000-1) surface is a new form of carbon that is composed of e…