464 citations · 812 across the 8 of their papers we have counts for
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cond-mat.mes-hall2011★ 30 cited
Silicon intercalation into the graphene-SiC interface
F. Wang, K. Shepperd, J. Hicks +11
In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room tem…
cond-mat.mes-hall2010★ 64 cited
Symmetry breaking in commensurate graphene rotational stacking; a comparison of theory and experiment
J. Hicks, M. Sprinkle, K. Shepperd +8
Graphene stacked in a Bernal configuration (60 degrees relative rotations between sheets) differs electronically from isolated graphene due to the broken symmetry introduced by int…