Spin-polarized quasi 1D state with finite bandgap on the Bi/InSb(001) surface

Abstract

One-dimensional (1D) electronic states were discovered on 1D surface atomic structure of Bi fabricated on semiconductor InSb(001) substrates by angle-resolved photoelectron spectroscopy (ARPES). The 1D state showed steep, Dirac-cone-like dispersion along the 1D atomic structure with a finite direct bandgap opening as large as 150 meV. Moreover, spin-resolved ARPES revealed the spin polarization of the 1D unoccupied states as well as that of the occupied states, the orientation of which inverted depending on the wave vector direction parallel to the 1D array on the surface. These results reveal that a spin-polarized quasi-1D carrier was realized on the surface of 1D Bi with highly efficient backscattering suppression, showing promise for use in future spintronic and energy-saving devices.

arXiv comment9 pages (4 figures for the main text, 7 for supplemental material). To be published in Physical Review Materials (Copyright is transferred to APS)

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Cited by in corpus (2)

• Effects of finite-range interactions on the one-electron spectral properties of one-dimensional metals: Application to Bi/InSb(001)
• Giant Rashba-Splitting of One-Dimensional Metallic States in Bi Dimer Lines on InAs(100)