activity
20112019
most citedA wide band gap metal-semiconductor-metal nanostructure made entirely from graphene

198 citations · 485 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2019★ 13 cited

Edge states and ballistic transport in zig-zag graphene ribbons: the role of SiC polytypes

A. L. Miettinen, M. S. Nevius, W. Ko +8

Zig-zag edge graphene ribbons grown on 6H-SiC facets are ballistic conductors. It has been assumed that zig-zag graphene ribbons grown on 4H-SiC would also be ballistic. However, i…

cond-mat.mes-hall2016★ 28 cited

Wide bandgap semiconductor from a hidden 2D incommensurate graphene phase

Matthew Conrad, Feng Wang, Meredith Nevius +10

Producing a usable semiconducting form of graphene has plagued the development of graphene electronics for nearly two decades. Now that new preparation methods have become availabl…

cond-mat.mtrl-sci2015★ 180 cited

Semiconducting graphene from highly ordered substrate interactions

M. S. Nevius, M. Conrad, F. Wang +5

While numerous methods have been proposed to produce semiconducting graphene, a significant bandgap has never been demonstrated. The reason is that, regardless of the theoretical g…

cond-mat.mtrl-sci2013★ 36 cited

Wide-Gap Semiconducting Graphene from Nitrogen-Seeded SiC

Feng Wang, Gang Liu, Sara Rothwell +6

All carbon electronics based on graphene has been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the develop…

cond-mat.mes-hall2012★ 198 cited

A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene

J. Hicks, A. Tejeda, A. Taleb-Ibrahimi +10

A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either st…

cond-mat.mes-hall2011★ 30 cited

Silicon intercalation into the graphene-SiC interface

F. Wang, K. Shepperd, J. Hicks +11

In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room tem…