180 citations · 180 across the 2 of their papers we have counts for
8 papers
Semiconducting graphene from highly ordered substrate interactions
M. S. Nevius, M. Conrad, F. Wang +5
While numerous methods have been proposed to produce semiconducting graphene, a significant bandgap has never been demonstrated. The reason is that, regardless of the theoretical g…
Wide-Gap Semiconducting Graphene from Nitrogen-Seeded SiC
Feng Wang, Gang Liu, Sara Rothwell +6
All carbon electronics based on graphene has been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the develop…
A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene
J. Hicks, A. Tejeda, A. Taleb-Ibrahimi +10
A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either st…
High Van Hove singularity extension and Fermi velocity increase in epitaxial graphene functionalized by gold clusters intercalation
M. N. Nair, M. Cranney, F. Vonau +6
Gold intercalation between the buffer layer and a graphene monolayer of epitaxial graphene on SiC(0001) leads to the formation of quasi free standing small aggregates of clusters.…
Silicon intercalation into the graphene-SiC interface
F. Wang, K. Shepperd, J. Hicks +11
In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room tem…
Symmetry breaking in commensurate graphene rotational stacking; a comparison of theory and experiment
J. Hicks, M. Sprinkle, K. Shepperd +8
Graphene stacked in a Bernal configuration (60 degrees relative rotations between sheets) differs electronically from isolated graphene due to the broken symmetry introduced by int…