The effect of the buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)

Abstract

Grazing incidence X-ray diffraction (GID) was employed to probe the structure of atomically thin carbon layers on SiC(0001): a so-called buffer layer (BL) with a $6(\sqrt{3}\times \sqrt{3})$R30${}^{\circ }$ periodicity, a monolayer graphene (MLG) on top of the BL, and a bilayer graphene (BLG). The GID analysis was complemented by Raman spectroscopy. The lattice parameter of each layer was measured with high precision by GID. The BL possesses a different lattice parameter and corrugation when it is uncovered or beneath MLG. Our results demonstrate that the interfacial BL is the main responsible for the strain in MLG. By promoting its decoupling from the substrate via intercalation, it turns into graphene, leading to a simultaneous relaxation of the MLG and formation of a quasi-free-standing BLG.

arXiv commentAccepted at Phys. Rev. B Rapid Communications. Supplementary material included

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• Li-intercalated Graphene on SiC(0001): an STM study
• Stacking domains in graphene on silicon carbide: a pathway for intercalation
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• Surfactant-Mediated Epitaxial Growth of Single-Layer Graphene in an Unconventional Orientation on SiC
• Epigraphene : epitaxial graphene on silicon carbide
• Stacking domain morphology in epitaxial graphene on silicon carbide