Phonon renormalisation in doped bilayer graphene

Abstract

We report phonon renormalisation in bilayer graphene as a function of doping. The Raman G peak stiffens and sharpens for both electron and hole doping, as a result of the non-adiabatic Kohn anomaly at the $\Gamma$ point. The bilayer has two conduction and valence subbands, with splitting dependent on the interlayer coupling. This results in a change of slope in the variation of G peak position with doping, which allows a direct measurement of the interlayer coupling strength.

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References in corpus (29)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• The Raman Fingerprint of Graphene
• Ultrahigh electron mobility in suspended graphene
• Energy Band Gap Engineering of Graphene Nanoribbons
• Control of graphene's properties by reversible hydrogenation
• Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• Suspended Graphene: a bridge to the Dirac point
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Making graphene visible
• Gate-induced insulating state in bilayer graphene devices
• Graphene Nano-Ribbon Electronics
• Born-Oppenheimer Breakdown in Graphene
• Asymmetry gap in the electronic band structure of bilayer graphene
• Temperature dependent transport in suspended graphene
• Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene
• A Graphene Field-Effect Device
• Raman Spectroscopy of Graphene Edges
• Raman Fingerprint of Charged Impurities in Graphene
• Rayleigh Imaging of Graphene and Graphene Layers
• Non-adiabatic Kohn-anomaly in a doped graphene monolayer
• Phonon Linewidths and Electron Phonon Coupling in Nanotubes
• Probing the Electronic Structure of Bilayer Graphene by Raman Scattering
• Evidence of structural strain in epitaxial graphene layers on 6H-SiC(0001)
• Theory of resonant multiphonon Raman scattering in graphene
• Cyclotron resonance in bilayer graphene
• Observation of Anomalous Phonon Softening in Bilayer Graphene
• Observation of Distinct Electron-Phonon Couplings in Gated Bilayer Graphene

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