Temperature dependent transport in suspended graphene
arXiv:0805.1830 · doi:10.1103/PhysRevLett.101.096802
Abstract
The resistivity of ultra-clean suspended graphene is strongly temperature dependent for 5K<T<240K. At T~5K transport is near-ballistic in a device of ~2um dimension and a mobility ~170,000 cm^2/Vs. At large carrier density, n>0.5*10^11 cm^-2, the resistivity increases with increasing T and is linear above 50K, suggesting carrier scattering from acoustic phonons. At T=240K the mobility is ~120,000 cm^2/Vs, higher than in any known semiconductor. At the charge neutral point we observe a non-universal conductivity that decreases with decreasing T, consistent with a density inhomogeneity <10^8 cm^-2.
References in corpus (16)
- Ultrahigh electron mobility in suspended graphene
- Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
- Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
- Charged Impurity Scattering in Graphene
- Atomic Structure of Graphene on SiO2
- Carrier transport in 2D graphene layers
- Measurement of Scattering Rate and Minimum Conductivity in Graphene
- Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
- Current-induced cleaning of graphene
- High-Resolution Scanning Tunneling Microscopy Imaging of Mesoscopic Graphene Sheets on an Insulating Surface
- Electronic transport in graphene: A semi-classical approach including midgap states
- Midgap states and charge inhomogeneities in corrugated graphene
- Friedel oscillations, impurity scattering and temperature dependence of resistivity in graphene
- Voltage and temperature dependencies of conductivity in gated graphene
- Boltzmann transport and residual conductivity in bilayer graphene
- Transport in suspended graphene
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