Scattering by flexural phonons in suspended graphene under back gate induced strain

Abstract

We have studied electron scattering by out-of-plane (flexural) phonon modes in doped suspended graphene and its effect on charge transport. In the free-standing case (absence of strain) the flexural branch shows a quadratic dispersion relation, which becomes linear at long wavelength when the sample is under tension due to the rotation symmetry breaking. In the non-strained case, scattering by flexural phonons is the main limitation to electron mobility. This picture changes drastically when strains above $\bar{u}=10^{-4}n(10^{12}{\text{cm}}^{-2})$ are considered. Here we study in particular the case of back gate induced strain, and apply our theoretical findings to recent experiments in suspended graphene.

4 pages, 3 figures, published version

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Cited by in corpus (9)

• Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction
• Flexural mode of graphene on a substrate
• Fictitious gauge fields in bilayer graphene
• Flexural phonon scattering induced by electrostatic gating in graphene
• Strain induced topological phase transition at zigzag edges of monolayer transition-metal dichalcogenides
• Hydrodynamic charge and heat transport on inhomogeneous curved spaces
• Strain manipulation of Majorana fermions in graphene armchair nanoribbons
• Full consideration of acoustic phonon scatterings in two-dimensional Dirac materials
• 2D electrons floating on a suspended atomically thin dielectric