Flexural phonon scattering induced by electrostatic gating in graphene

Abstract

Graphene has an extremely high carrier mobility partly due to its planar mirror symmetry inhibiting scattering by the highly occupied acoustic flexural phonons. Electrostatic gating of a graphene device can break the planar mirror symmetry yielding a coupling mechanism to the flexural phonons. We examine the effect of the gate-induced one-phonon scattering on the mobility for several gate geometries and dielectric environments using first-principles calculations based on density functional theory (DFT) and the Boltzmann equation. We demonstrate that this scattering mechanism can be a mobility-limiting factor, and show how the carrier density and temperature scaling of the mobility depends on the electrostatic environment. Our findings may explain the high deformation potential for in-plane acoustic phonons extracted from experiments and furthermore suggest a direct relation between device symmetry and resulting mobility.

Accepted at Physical Review Letters

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• First-Principles Electron Transport with Phonon Coupling: Large-Scale at Low Cost
• Composition Dependence of the Charge Driven Phase Transition in Group-VI Transition Metal Dichalcogenides
• Interplay between in-plane and flexural phonons in electronic transport of two-dimensional semiconductors
• A functional approach to the electronic and bosonic dynamics of many-body systems perturbed with an arbitrary strong electron-boson interaction
• Strong plasmon-phonon splitting and hybridization in 2D materials revealed through a self-energy approach
• ${\sigma }_h$ symmetry and electron-phonon interaction in two-dimensional crystalline systems
• Bloch-Grüneisen temperature and universal scaling of normalized resistivity in doped graphene revisited
• Multifractal wave functions of charge carriers in graphene with folded deformations, ripples or uniaxial flexural modes: analogies to the quantum Hall effect under random pseudomagnetic fields