Flexural phonon scattering induced by electrostatic gating in graphene

Abstract

Graphene has an extremely high carrier mobility partly due to its planar mirror symmetry inhibiting scattering by the highly occupied acoustic flexural phonons. Electrostatic gating of a graphene device can break the planar mirror symmetry yielding a coupling mechanism to the flexural phonons. We examine the effect of the gate-induced one-phonon scattering on the mobility for several gate geometries and dielectric environments using first-principles calculations based on density functional theory (DFT) and the Boltzmann equation. We demonstrate that this scattering mechanism can be a mobility-limiting factor, and show how the carrier density and temperature scaling of the mobility depends on the electrostatic environment. Our findings may explain the high deformation potential for in-plane acoustic phonons extracted from experiments and furthermore suggest a direct relation between device symmetry and resulting mobility.

Accepted at Physical Review Letters

References in corpus (16)

• Boron nitride substrates for high-quality graphene electronics
• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• Suspended Graphene: a bridge to the Dirac point
• Controlling electron-phonon interactions in graphene at ultra high carrier densities
• Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
• Electronic transport in graphene: A semi-classical approach including midgap states
• Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering
• Strong coupling between single-electron tunneling and nano-mechanical motion
• Limits on electron quality in suspended graphene due to flexural phonons
• Symmetry-based approach to electron-phonon interactions in graphene
• Electron-Phonon Interactions and the Intrinsic Electrical Resistivity of Graphene
• Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment
• Phonon-limited resistivity of graphene by first-principle calculations: electron-phonon interactions, strain-induced gauge field and Boltzmann equation
• Diffusive Charge Transport in Graphene on SiO2
• Phonons and electron-phonon coupling in graphene-h-BN heterostructures
• Dynamics and Dissipation induced by Single-Electron Tunneling in Carbon Nanotube Nanoelectromechanical Systems

Cited by in corpus (2)

• First-Principles Electron Transport with Phonon Coupling: Large-Scale at Low Cost
• Strong plasmon-phonon splitting and hybridization in 2D materials revealed through a self-energy approach