Phonons and electron-phonon coupling in graphene-h-BN heterostructures

Abstract

First principle calculations of the phonons of graphene-BN heterostructures are presented and compared to those of the constituents. We show that AA and AB' stacking are not only energetically less favoured than AB but also dynamically unstable. We have identified low energy flat phonon branches of BN character with out of plane displacement and evaluated their coupling to electrons in graphene.

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References in corpus (7)

• Boron nitride substrates for high-quality graphene electronics
• Micrometer-scale ballistic transport in encapsulated graphene at room temperature
• STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
• Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride
• Multicomponent fractional quantum Hall effect in graphene
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Cited by in corpus (5)

• Performance of arsenene and antimonene double-gate MOSFETs from first principles
• Raman Signature and Phonon Dispersion of Atomically Thin Boron Nitride
• Flexural phonon scattering induced by electrostatic gating in graphene
• Midgap states and band gap modification in defective graphene/h-BN heterostructures
• Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride