Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride
arXiv:2308.13846 · doi:10.1021/acs.nanolett.3c02086
Abstract
Understanding the collective behavior of the quasiparticles in solid-state systems underpins the field of non-volatile electronics, including the opportunity to control many-body effects for well-desired physical phenomena and their applications. Hexagonal boron nitride (hBN) is a wide energy bandgap semiconductor, showing immense potential as a platform for low-dimensional device heterostructures. It is an inert dielectric used for gated devices, having a negligible orbital hybridization when placed in contact with other systems. Despite its inertness, we discover a large electron mass enhancement in few-layer hBN affecting the lifetime of the -band states. We show that the renormalization is phonon-mediated and consistent with both single- and multiple-phonon scattering events. Our findings thus unveil a so-far unknown many-body state in a wide-bandgap insulator, having important implications for devices using hBN as one of their building blocks.
This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright 2022 The Authors, licensed under CC-BY 4.0 after peer review. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.3c02086
References in corpus (14)
- Boron nitride substrates for high-quality graphene electronics
- Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
- Atomically thin boron nitride: a tunnelling barrier for graphene devices
- A precise method for visualizing dispersive features in image plots
- Energy gap tuning in graphene on hexagonal boron nitride bilayer system
- Stability of boron nitride bilayers: Ground state energies, interlayer distances, and tight-binding description
- Morphology of graphene thin film growth on SiC(0001)
- Bare electron dispersion from photoemission experiments
- Self-consistent self-energy analysis of photoemission data
- Direct extraction of the Eliashberg function for electron-phonon coupling: A case study of Be(1010)
- Phonons and electron-phonon coupling in graphene-h-BN heterostructures
- Strong electron-phonon coupling in the sigma band of graphene
- Nanospot Angle-Resolved Photoemission Study of Bernal-Stacked Bilayer Graphene on Hexagonal Boron Nitride: Band Structure and Local Variation of Lattice Alignment
- Suppression of electron scattering resonances in graphene by quantum dots