Quasi-freestanding and single-atom thick layer of hexagonal boron nitride as a substrate for graphene synthesis
arXiv:1008.1874 · doi:10.1103/PhysRevB.82.075415
Abstract
We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (hbn) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, X-ray photoemission and absorption techniques. It has been demonstrated that the transition of the hbn layer from the "rigid" into the "quasi-freestanding" state is accompanied by a change of its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasi-freestanding hbn monolayer. We anticipate that the in situ synthesized weakly interacting graphene/hbn double layered system could be further developed for technological applications and may provide perspectives for further inquiry into the unusual electronic properties of graphene.
in print in Phys. Rev. B
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- Interaction-induced metallic state in graphene on hexagonal boron nitride
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- Quasi-free-standing monolayer hexagonal boron nitride on Ni