Moire miniband features in the angle-resolved photoemission spectra of graphene/hBN heterostructures

Abstract

We identify features in the angle-resolved photoemission spectra (ARPES) arising from the periodic pattern characteristic for graphene heterostructure with hexagonal boron nitride (hBN). For this, we model ARPES spectra and intensity maps for five microscopic models used previously to describe moire superlattice in graphene/hBN systems. We show that detailed analysis of these features can be used to pin down the microscopic mechanism of the interaction between graphene and hBN. We also analyze how the presence of a moire-periodic strain in graphene or scattering of photoemitted electrons off hBN can be distinguished from the miniband formation.

8.5 pages and 9 figures; version published in Phys. Rev. B

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Cited by in corpus (11)

• Helical Network Model for Twisted Bilayer Graphene
• 30${}^{\circ }$-twisted bilayer graphene quasicrystals from chemical vapor deposition
• Moiré band model and band gaps of graphene on hexagonal boron nitride
• Stacking in incommensurate graphene/hexagonal-boron-nitride heterostructures based on ab initio study of interlayer interaction
• Midgap states and band gap modification in defective graphene/h-BN heterostructures
• Moiré superlattice effects and band structure evolution in near-30-degree twisted bilayer graphene
• Determination of interatomic coupling between two-dimensional crystals using angle-resolved photoemission spectroscopy
• General theoretical description of angle-resolved photoemission spectroscopy of van der Waals structures
• Theory of ARPES in Graphene-Based Moiré Superlattices
• Negative differential resistance in Van der Waals heterostructures due to moiré-induced spectral reconstruction
• Controlled formation of an isolated miniband in bilayer graphene on an almost commensurate $\sqrt{3}\times \sqrt{3}$ substrate