Theory of ARPES in Graphene-Based Moiré Superlattices
arXiv:2006.08908 · doi:10.1103/PhysRevB.103.235146
Abstract
Graphene-based moiré superlattices are now established as an interesting platform for strongly-correlated many-electron physics, and have so far been characterized mainly by transport and scanning tunneling microscopy (STM) measurements. Motivated by recent experimental progress, we present a theoretical model study whose aim is to assess the potential of angle-resolved photoemission spectroscopy (ARPES) to resolve some of the many open issues in these systems. The theory is developed specifically for graphene on hexagonal boron nitride (G/hBN) and twisted bilayer graphene (TBG) moiré superlattices, but is readily generalized to any system with active degrees of freedom in graphene sheets.
References in corpus (29)
- Electric Field Effect in Atomically Thin Carbon Films
- Boron nitride substrates for high-quality graphene electronics
- Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
- Substrate-induced band gap opening in epitaxial graphene
- STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
- Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride
- The electronic properties of bilayer graphene
- Lattice relaxation and energy band modulation in twisted bilayer graphenes
- New Generation of Massless Dirac Fermions in Graphene under External Periodic Potentials
- Chern Insulators and Topological Flat-bands in Magic-angle Twisted Bilayer Graphene
- Origin of band gaps in graphene on hexagonal boron nitride
- Electrical switching of magnetic order in an orbital Chern insulator
- Electronic properties of bilayer and multilayer graphene
- Tight--binding description of the quasiparticle dispersion of graphite and few--layer graphene
- Visualization of the flat electronic band in twisted bilayer graphene near the magic angle twist
- Symmetry Breaking in Few Layer Graphene Films
- Kohn-Luttinger superconductivity in graphene
- Characterization of graphene through anisotropy of constant-energy maps in angle-resolved photoemission
- Lattice Theory of Pseudospin Ferromagnetism in Bilayer Graphene: Competing Orders and Interaction Induced Quantum Hall States
- Role of the trigonal warping on the minimal conductivity of bilayer graphene
- Structure of twisted and buckled bilayer graphene
- Moiré band model and band gaps of graphene on hexagonal boron nitride
- Three-dimensional band structure of layered TiTe2: Photoemission final-state effects
- Visualizing the Effect of an Electrostatic Gate with Angle-Resolved Photoemission Spectroscopy
- Pomeranchuk instability in doped graphene
- Optically induced Lifshitz transition in bilayer graphene
- Transport and particle-hole asymmetry in graphene on boron nitride
- Electronic structure of transferred graphene/h-BN van der Waals heterostructures with nonzero stacking angles by nano-ARPES
- Nanospot Angle-Resolved Photoemission Study of Bernal-Stacked Bilayer Graphene on Hexagonal Boron Nitride: Band Structure and Local Variation of Lattice Alignment
Cited by in corpus (4)
- Moiré superlattice effects and band structure evolution in near-30-degree twisted bilayer graphene
- Tailoring Dirac fermions by in-situ tunable high-order moire pattern in graphene-monolayer xenon heterostructure
- ARPES signatures of few-layer twistronic graphenes
- The low energy excitation spectrum of magic-angle semimetals