Symmetry Breaking in Few Layer Graphene Films
arXiv:0705.3705 · doi:10.1088/1367-2630/9/10/385
Abstract
Recently, it was demonstrated that the quasiparticle dynamics, the layer-dependent charge and potential, and the c-axis screening coefficient could be extracted from measurements of the spectral function of few layer graphene films grown epitaxially on SiC using angle-resolved photoemission spectroscopy (ARPES). In this article we review these findings, and present detailed methodology for extracting such parameters from ARPES. We also present detailed arguments against the possibility of an energy gap at the Dirac crossing ED.
23 pages, 13 figures, Conference Proceedings of DPG Meeting Mar 2007 Regensburg Submitted to New Journal of Physics
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- The Role of Electron-electron Interactions in Graphene ARPES Spectra
- Morphology of graphene thin film growth on SiC(0001)
- Quasiparticle Chirality in Epitaxial Graphene Probed at the Nanometer Scale
- Characterization of graphene through anisotropy of constant-energy maps in angle-resolved photoemission
- Formation of atomic nanoclusters on graphene sheets
- First-Principles Study of Electron Linewidths in Graphene
- Van Hove Singularity and Apparent Anisotropy in the Electron-Phonon Interaction in Graphene
- Spectroscopic Signatures of Massless Gap Opening in Graphene
- Localized magnetic states in biased bilayer and trilayer graphene
- Vertex renormalization in dc conductivity of doped chiral graphene