Dependence of band structures on stacking and field in layered graphene

Abstract

Novel systems of layered graphene are attracting interest for theories and applications. The stability, band structures of few-layer graphite films, and their dependence on electric field applied along the c-axis are examined within the density functional theory. We predict that those of Bernal type and also rhombohedral type tri- and tetra-layer graphite films exhibit stability. The rhombohedral-type systems including AB-bilayer, show variable band gap induced by perpendicular electric field, whereas the other systems such as the Bernal-type films stay semi-metallic.

5 pages, 5 figures, accepted for publication in Solid State Communications

References in corpus (4)

• Electric Field Effect in Atomically Thin Carbon Films
• Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
• Asymmetry gap in the electronic band structure of bilayer graphene
• Electronic states and Landau levels in graphene stacks

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