Layer breathing modes in few-layer graphene

Abstract

Layer-layer coupling plays a critical role in defining the physical properties of few-layer graphene (FLG). With respect to vibrations, the interlayer coupling is predicted to create a set of N-1 finite frequency, out-of-plane interlayer modes in N-layer graphene. Unlike the widely studied in-plane vibrations, the properties of these layer-breathing modes (LBMs) are defined by the layer-layer interactions. Here we report direct observation of the distinct LBMs for graphene of thicknesses from 2 to 20 layers through electronically resonant overtone Raman bands observed in the range of 80 - 300 cm-1. The Raman bands exhibit multi-peak features that are unique for graphene samples of each layer thickness up to 20 layers. The frequencies of the set of layer breathing modes for all samples can be described within a simple model of nearest plane coupling.

References in corpus (21)

• The electronic properties of graphene
• The Raman Fingerprint of Graphene
• Graphene: Status and Prospects
• Electronic transport in two dimensional graphene
• The Shear Mode of Multi-Layer Graphene
• Electronic states and Landau levels in graphene stacks
• Observation of an electrically tunable band gap in trilayer graphene
• The phonon dispersion of graphite by inelastic x-ray scattering
• Band Structure of ABC-Stacked Graphene Trilayers
• Dependence of band structures on stacking and field in layered graphene
• Electronic Structure of Few-Layer Graphene: Experimental Demonstration of Strong Dependence on Stacking Sequence
• Orbital diamagnetism in multilayer graphenes: Systematic study with the effective mass approximation
• Raman spectroscopy of the interlayer shear mode in few-layer MoS2 flakes
• Observation of out-of-plane vibrations in few-layer graphene
• Group theory analysis of electrons and phonons in N-layer graphene systems
• Electronic structure of multilayer graphene
• Gate-induced interlayer asymmetry in ABA-stacked trilayer graphene
• Phonons of graphene and graphitic materials derived from the empirical potential LCBOPII
• Raman and Infra-red properties and layer dependence of the phonon dispersions in multi-layered graphene
• Theory of rigid-plane phonon modes in layered crystals
• Layer number determination in graphene using out-of-plane vibrations

Cited by in corpus (34)

• Raman spectroscopy as a versatile tool for studying the properties of graphene
• Hexagonal boron nitride is an indirect bandgap semiconductor
• Lattice Vibrational Modes and Phonon Thermal Conductivity of Monolayer MoS2
• Helicity resolved Raman scattering of MoS2, MoSe2, WS2 and WSe2 atomic layers
• Quantum Monte Carlo Calculation of the Binding Energy of Bilayer Graphene
• Observation of interlayer phonon modes in van der Waals heterostructures
• Observation of Low-frequency Interlayer Breathing Modes in Few-layer Black Phosphorus
• Raman Optothermal Technique for Measuring Thermal Conductivity of Graphene and Related Materials
• Coupling and stacking order of ReS2 atomic layers revealed by ultralow-frequency Raman spectroscopy
• Raman signatures of inversion symmetry breaking and structural phase transition in type-II Weyl semimetal MoTe2
• Mapping of Low-Frequency Raman Modes in CVD-Grown Transition Metal Dichalcogenides: Layer Number, Stacking Orientation and Resonant Effects
• Observation of Low Energy Raman Modes in Twisted Bilayer Graphene
• First-principles investigation of graphene/MoS2 bilayer heterostructures using Tkatchenko-Scheffler van der Waals method
• Large Frequency Change with Thickness in Interlayer Breathing Mode - Significant Interlayer Interactions in Few Layer Black Phosphorus
• Newly observed first-order resonant Raman modes in few-layer MoS${}_2$
• Resonant Low Frequency Interlayer Shear Modes in Folded Graphene Layers
• Comparison of performance of van der Waals-corrected exchange-correlation functionals for interlayer interaction in graphene and hexagonal boron nitride
• Collective Excitations in 2D Materials
• Temperature-activated layer-breathing vibrations in few-layer graphene
• Stacking-Dependent Interlayer Phonons in 3R and 2H MoS${}_2$
• Terahertz phonon engineering with van der Waals heterostructures
• Stacking-dependent shear modes in trilayer graphene
• Interlayer bond polarizability model for stacking-dependent low-frequency Raman scattering in layered materials
• Double-resonant LA phonon scattering in defective graphene and carbon nanotubes
• Ultrafast coherent interlayer phonon dynamics in atomically thin layers of MnBi2Te4
• Two-phonon Raman bands of bilayer graphene: revisited
• Incidence of multilayers in chemically exfoliated graphene
• Low-frequency phonons of few-layer graphene within a tight-binding model
• Van der Waals interlayer potential of graphitic structures: from Lennard-Jones to Kolmogorov-Crespy and Lebedeva models
• Phonons in MoSe2/WSe2 van der Waals heterobilayer
• Enhancement of thermoelectric figure-of-merit of Graphene upon BN-doping and sample length reduction
• Temperature Dependent Layer Breathing Modes in Two Dimensional Materials
• Layer breathing and shear modes in multilayer graphene: A DFT-vdW study
• Quasi-bound layer-breathing phonons inside perfect dislocations of lattice-relaxed twisted bilayers