Raman and Infra-red properties and layer dependence of the phonon dispersions in multi-layered graphene

Abstract

The symmetry group analysis is applied to classify the phonon modes of $N$-stacked graphene layers (NSGL's) with AB- and AA-stacking, particularly their infra-red and Raman properties. The dispersions of various phonon modes are calculated in a multi-layer vibrational model, which is generalized from the lattice vibrational potentials of graphene to including the inter-layer interactions in NSGL's. The experimentally reported red shift phenomena in the layer number dependence of the intra-layer optical C-C stretching mode frequencies are interpreted. An interesting low frequency inter-layer optical mode is revealed to be Raman or Infra-red active in even or odd NSGL's respectively. Its frequency shift is sensitive to the layer number and saturated at about 10 layers.

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References in corpus (6)

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• Temperature-activated layer-breathing vibrations in few-layer graphene
• Observation of Raman G-band splitting in top-doped few-layer graphene
• Stacking-dependent shear modes in trilayer graphene
• Shear and breathing modes of layered materials
• Role of electronic excitations in magneto-Raman spectra of graphene
• Low-frequency phonons of few-layer graphene within a tight-binding model
• Registry Effect on the Thermal Conductivity of Few-Layer Graphene