Group theory analysis of electrons and phonons in N-layer graphene systems

Abstract

In this work we study the symmetry properties of electrons and phonons in graphene systems as function of the number of layers. We derive the selection rules for the electron-radiation and for the electron-phonon interactions at all points in the Brillouin zone. By considering these selection rules, we address the double resonance Raman scattering process. The monolayer and bilayer graphene in the presence of an applied electric field are also discussed.

8 pages, 6 figures

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• The electronic properties of graphene
• The Raman Fingerprint of Graphene
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Asymmetry gap in the electronic band structure of bilayer graphene
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• Reduction of Fermi velocity in folded graphene observed by resonance Raman spectroscopy
• Existence and topological stability of Fermi points in multilayered graphene
• Transmission through a biased graphene bilayer barrier
• Raman and Infra-red properties and layer dependence of the phonon dispersions in multi-layered graphene

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• Direct driving of electronic and phononic degrees of freedom in a honeycomb bilayer with infrared light
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