Observation of the Kohn anomaly near the K point of bilayer graphene
arXiv:0907.3322 · doi:10.1103/PhysRevB.80.241414
Abstract
The dispersion of electrons and phonons near the K point of bilayer graphene was investigated in a resonant Raman study using different laser excitation energies in the near infrared and visible range. The electronic structure was analyzed within the tight-binding approximation, and the Slonczewski-Weiss-McClure (SWM) parameters were obtained from the analysis of the dispersive behavior of the Raman features. A softening of the phonon branches was observed near the K point, and results evidence the Kohn anomaly and the importance of considering electron-phonon and electron-electron interactions to correctly describe the phonon dispersion in graphene systems.
4 pages, 4 figures
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- Long ranged interactions in carbon atomic chains
- Determination of Edge Purity in Bilayer Graphene Using micro-Raman Spectroscopy
- Topological Singularity Induced Chiral Kohn Anomaly in a Weyl Semimetal
- Two-dimensional analysis of the double-resonant 2D Raman mode in bilayer graphene
- Emergence of a ZO Kohn anomaly in quasi-freestanding epitaxial graphene
- Spectral features due to inter-Landau-level transitions in the Raman spectrum of bilayer graphene
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- Thermal smearing of the magneto-Kohn anomaly for Dirac materials and comparison with the two-dimensional electron liquid