On the inner Double-Resonance Raman scattering process in bilayer graphene
arXiv:1008.0291 · doi:10.1016/j.carbon.2010.11.053
Abstract
The dispersion of phonons and the electronic structure of graphene systems can be obtained experimentally from the double-resonance (DR) Raman features by varying the excitation laser energy. In a previous resonance Raman investigation of graphene, the electronic structure was analyzed in the framework of the Slonczewski-Weiss-McClure (SWM) model, considering the outer DR process. In this work we analyze the data considering the inner DR process, and obtain SWM parameters that are in better agreement with those obtained from other experimental techniques. This result possibly shows that there is still a fundamental open question concerning the double resonance process in graphene systems.
5 pages, 3 figures
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Cited by in corpus (12)
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- Theory of double-resonant Raman spectra in graphene: intensity and line shape of defect-induced and two-phonon bands
- Strain-dependent Splitting of Double Resonance Raman Scattering Band in Graphene
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- Intrinsic lineshape of the Raman 2D-mode in freestanding graphene monolayers
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