paper

Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers

arXiv:cond-mat/0612236 · doi:10.1103/PhysRevB.75.155115

Abstract

We study the gate voltage induced gap that occurs in graphene bilayers using \textit{ab initio} density functional theory. Our calculations confirm the qualitative picture suggested by phenomenological tight-binding and continuum models. We discuss enhanced screening of the external interlayer potential at small gate voltages, which is more pronounced in the \textit{ab initio} calculations, and quantify the role of crystalline inhomogeneity using a tight-binding model self-consistent Hartree calculation.

arXiv comment7 pages, 7 figures; the effect of r3 coupling included; typo corrected

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