Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers

Abstract

We study the gate voltage induced gap that occurs in graphene bilayers using \textit{ab initio} density functional theory. Our calculations confirm the qualitative picture suggested by phenomenological tight-binding and continuum models. We discuss enhanced screening of the external interlayer potential at small gate voltages, which is more pronounced in the \textit{ab initio} calculations, and quantify the role of crystalline inhomogeneity using a tight-binding model self-consistent Hartree calculation.

7 pages, 7 figures; the effect of r3 coupling included; typo corrected

References in corpus (6)

• Electric Field Effect in Atomically Thin Carbon Films
• Two Dimensional Atomic Crystals
• Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
• Asymmetry gap in the electronic band structure of bilayer graphene
• Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets
• Charge and spin Hall conductivity in metallic graphene

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