Charge transport in dual gated bilayer graphene with Corbino geometry

Abstract

The resistance of dual-gated bilayer graphene is measured as a function of temperature and gating electric fields in the Corbino geometry which precludes edge transport. The temperature-dependent resistance is quantitatively described by a two channel conductance model including parallel thermal activation and variable range hopping channels, which gives the electric-field-dependent band gap whose magnitude is found to be in good agreement with infrared absorption experiments. Low temperature transport is similar to previous studies of dual-gated bilayer graphene with edges, suggesting that edge transport does not play an important role.

5 figures

References in corpus (16)

• The electronic properties of graphene
• The Raman Fingerprint of Graphene
• Control of graphene's properties by reversible hydrogenation
• Gate-induced insulating state in bilayer graphene devices
• Electronic States of Graphene Nanoribbons
• Asymmetry gap in the electronic band structure of bilayer graphene
• Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature
• Peculiar Width Dependence of the Electronic Property of Carbon Nanoribbons
• Transport measurements across a tunable potential barrier in graphene
• Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
• Energy gaps in etched graphene nanoribbons
• Determination of the electronic structure of bilayer graphene from infrared spectroscopy results
• Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields
• Density inhomogeneity driven percolation metal-insulator transition and dimensional crossover in graphene nanoribbons
• Measurement of the electronic compressibility of bilayer graphene
• Peierls-type Instability and Tunable Band Gap in Functionalized Graphene

Cited by in corpus (22)

• The electronic properties of bilayer graphene
• Edge currents shunt the insulating bulk in gapped graphene
• Transport spectroscopy of ultraclean tunable band gaps in bilayer graphene
• Experimental determination of the energy per particle in partially filled Landau levels
• Fractional quantum Hall effect in CVD-grown graphene
• Intra-Landau level magnetoexcitons and the transition between quantum Hall states in undoped bilayer graphene
• Optical and transport gaps in gated bilayer graphene
• Hydrodynamic thermoelectric transport in Corbino geometry
• Graphene disk in a solenoid magnetic potential: Aharonov-Bohm effect without a two-slit-like setup
• Magnetopumping current in graphene Corbino pump
• Hydrodynamic magnetoresistance in graphene Corbino devices
• Marginally Self-Averaging One-Dimensional Localization in Bilayer Graphene
• Supercurrent mediated by helical edge modes in bilayer graphene
• Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor
• Giant magnetoresistance in weakly disordered non-Galilean invariant conductors
• Magnetoconductance of the Corbino disk in graphene: Chiral tunneling and quantum interference in the bilayer case
• Gating monolayer and bilayer graphene with a two-dimensional semiconductor
• Energy symmetry and interlayer wave function ratio of tunneling electrons in partially overlapped graphene
• Characteristic nanoscale deformations on large area coherent graphite moiré
• Hexagonal boron nitride/bilayer graphene moiré superlattices in the Dirac-material family: energy-band engineering and carrier doping by dual gating
• Spin-caloric resistance of Dirac plasma in a graphene Corbino device
• Controlled generation and detection of a thermal bias in Corbino devices under the quantum Hall regime