Hexagonal boron nitride/bilayer graphene moiré superlattices in the Dirac-material family: energy-band engineering and carrier doping by dual gating
arXiv:2509.21759 · doi:10.1088/1361-648X/ae05a5
Abstract
We review the fabrication and transport characterization of hexagonal boron nitride (hBN)/Bernal bilayer graphene (BLG) moiré superlattices. Due to the moiré effect, the hBN/BLG moiré superlattices exhibit an energy gap at the charge neutrality point (CNP) even in the absence of a perpendicular electric field. In BLG, the application of a perpendicular electric field tunes the energy gap at the CNP, which contrasts with single-layer graphene and is similar to the family of rhombohedral multilayer graphene. The hBN/BLG moiré superlattice is associated with non-trivial energy-band topology and a narrow energy band featuring a van Hove singularity. By employing a dual-gated device structure where both the perpendicular displacement field and the carrier density are individually controllable, systematic engineering of the energy-band structure can be achieved. The data presented here demonstrate the universality and diversity in the physics of hBN/BLG moiré superlattices.
42 pages, 13 figures, This is an invited review to appear in J. Phys.: Condens. Matter, which is based on a conference talk summarized as arXiv:2410.05649 (unpublished)
References in corpus (66)
- Electric Field Effect in Atomically Thin Carbon Films
- The Raman Fingerprint of Graphene
- Ultrahigh electron mobility in suspended graphene
- Boron nitride substrates for high-quality graphene electronics
- Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
- Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
- The Valley Hall Effect in MoS2 Transistors
- Making graphene visible
- Gate-induced insulating state in bilayer graphene devices
- STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
- Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride
- The electronic properties of bilayer graphene
- Hunting for Monolayer Boron Nitride: Optical and Raman Signatures
- Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
- Detecting Topological Currents in Graphene Superlattices
- Semiconductor Spin Qubits
- Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials
- Moiré heterostructures as a condensed matter quantum simulator
- Topological confinement in bilayer graphene
- Substrate limited electron dynamics in graphene
- Isospin magnetism and spin-triplet superconductivity in Bernal bilayer graphene
- Probing the Electronic Structure of Bilayer Graphene by Raman Scattering
- Electronic properties of graphene hexagonal boron nitride moiré superlattice
- Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields
- Edge chirality determination of graphene by Raman spectroscopy
- Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect
- Quantum Anomalous Hall State in Bilayer Graphene
- Valley-Hall Kink and Edge States in Multilayer Graphene
- Even denominator fractional quantum Hall state in bilayer graphene
- Evidence for a Spin Phase Transition at ν=0 in Bilayer Graphene
- Quantum cascade of new correlated phases in trigonally warped bilayer graphene
- Dielectric Screening in Atomically Thin Boron Nitride Nanosheets
- High-temperature quantum oscillations caused by recurring Bloch states in graphene superlattices
- Cascade of isospin phase transitions in Bernal bilayer graphene at zero magnetic field
- Signatures of Chiral Superconductivity in Rhombohedral Graphene
- Programming moiré patterns in 2D materials by bending
- Tunable and giant valley-selective Hall effect in gapped bilayer graphene
- Tunable quantum anomalous Hall octet driven by orbital magnetism in bilayer graphene
- Charge transport in dual gated bilayer graphene with Corbino geometry
- Topological and stacked flat bands in bilayer graphene with a superlattice potential
- Superconductivity and quantized anomalous Hall in rhombohedral graphene
- Superconductivity in graphite intercalation compounds
- Transport spectroscopy of ultraclean tunable band gaps in bilayer graphene
- Spin-triplet superconductivity at the onset of isospin order in biased bilayer graphene
- Dielectric Screening by 2D Substrates
- Isospin and momentum polarized orders in bilayer graphene
- Topological Valley Currents in Bilayer Graphene/Hexagonal Boron Nitride Superlattices
- Band structure engineering using a moiré polar substrate
- Spin-orbit proximity in MoS/bilayer graphene heterostructures
- Enhanced electron-phonon coupling in doubly aligned hexagonal boron nitride bilayer graphene heterostructure
- Engineering band structures of two-dimensional materials with remote moire ferroelectricity
- Non-identical moiré twins in bilayer graphene
- Signature of Correlated Insulator in Electric Field Controlled Superlattice
- Gate-defined electron interferometer in bilayer graphene
- de Haas-van Alphen spectroscopy and fractional quantization of magnetic-breakdown orbits in moiré graphene
- Fabry-Pérot resonances and a crossover to the quantum Hall regime in ballistic graphene quantum point contacts
- Torsional Force Microscopy of Van der Waals Moirés and Atomic Lattices
- Electric field-tunable layer polarization in graphene/boron nitride twisted quadrilayer superlattices
- Wide-range resistivity and umklapp scattering in moiré graphene
- Deterministic fabrication of graphene hexagonal boron nitride moiré superlattices
- Dual-gated hBN/bilayer-graphene superlattices and the transitions between the insulating phases at the charge neutrality point
- High-mobility compensated semimetals, orbital magnetization, and umklapp scattering in bilayer graphene moire superlattices
- Umklapp electron-electron scattering in bilayer graphene moiré superlattice
- Interplay of valley, layer and band topology towards interacting quantum phases in moiré bilayer graphene
- Controlling Umklapp scattering in bilayer graphene moir'e superlattice
- Impact of the angular alignment on the crystal field and intrinsic doping of bilayer graphene/BN heterostructures