Dual-gated hBN/bilayer-graphene superlattices and the transitions between the insulating phases at the charge neutrality point

Abstract

We report on transport properties in dual-gated hexagonal boron nitride (hBN)/bilayer-graphene (BLG) superlattices. Here, BLG is nontwisted, i.e., plain. This paper focuses on the charge neutrality point (CNP) for a plain BLG. Under a perpendicular magnetic field, transitions between two insulating phases at the CNP are detected by varying a displacement field with the study on the resistance-temperature characteristics and the magnetoresistance. This work opens avenues for exploring the global phase diagram of the hBN/BLG superlattices beyond the CNP.

22 pages, 9 figures

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Cited by in corpus (6)

• Controlling the orbital Hall effect in gapped bilayer graphene in the terahertz regime
• Engineering nonlinear Hall effect in bilayer graphene/black phosphorus heterostructures
• Bilayer graphene in periodic and quasiperiodic magnetic superlattices
• Featuring nuanced electronic band structure in gapped multilayer graphene
• Impact of the angular alignment on the crystal field and intrinsic doping of bilayer graphene/BN heterostructures
• Hexagonal boron nitride/bilayer graphene moiré superlattices in the Dirac-material family: energy-band engineering and carrier doping by dual gating