Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at $\nu =0$ in High Magnetic Fields

Abstract

We investigate the transverse electric field ($E$) dependence of the $\nu$=0 quantum Hall state (QHS) in dual-gated graphene bilayers in high magnetic fields. The longitudinal resistivity (${\rho }_{xx}$) measured at $\nu$=0 shows an insulating behavior which is strongest in the vicinity of $E$=0, and at large $E$-fields. At a fixed perpendicular magnetic field ($B$), the $\nu$=0 QHS undergoes a transition as a function of $E$, marked by a minimum, temperature-independent ${\rho }_{xx}$. This observation is explained by a transition from a spin polarized $\nu$=0 QHS at small $E$-fields, to a valley (layer) polarized $\nu$=0 QHS at large $E$-fields. The $E$-field value at which the transition occurs has a linear dependence on $B$

5 pages, 5 figures

References in corpus (10)

• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
• Gate-induced insulating state in bilayer graphene devices
• Asymmetry gap in the electronic band structure of bilayer graphene
• Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
• Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
• Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields
• Intra-Landau level Cyclotron Resonance in Bilayer Graphene
• Dynamics and phase diagram of the $\nu =0$ quantum Hall state in bilayer graphene
• Intra-Landau level magnetoexcitons and the transition between quantum Hall states in undoped bilayer graphene

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• SO(5) symmetry in the quantum Hall effect in graphene
• Magneto-optical and optical probes of gapped ground states of bilayer graphene
• Distinct Competing Ordered ν=2 States in Bilayer Graphene
• Coexistence and competition of nematic and gapped states in bilayer graphene
• Phase diagram of a graphene bilayer in the zero-energy Landau level
• Dual-gated hBN/bilayer-graphene superlattices and the transitions between the insulating phases at the charge neutrality point
• Ising quantum Hall ferromagnetism in Landau levels $\left|N\right|\ge 1$ of bilayer graphene
• Tuning Spin Transport in a Graphene Antiferromagnetic Insulator
• Broken symmetry states in bilayer graphene in electric and in-plane magnetic fields
• Temperature-induced phase transitions in the quantum Hall magnet of bilayer graphene
• Infrared spectroscopy of phase transitions in the lowest Landau levels of bilayer graphene
• Orbital mixing in few-layer graphene and non-Abelian Berry phase