Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric

Abstract

We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility values of over 8,000 cm2/Vs at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering, and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value.

3 pages, 3 figures; to appear in Appl. Phys. Lett

References in corpus (11)

• Electric Field Effect in Atomically Thin Carbon Films
• The Raman Fingerprint of Graphene
• Ultrahigh electron mobility in suspended graphene
• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Making graphene visible
• Atomic Structure of Graphene on SiO2
• A self-consistent theory for graphene transport
• A Graphene Field-Effect Device
• Operation of Graphene Transistors at GHz Frequencies
• Measurement of Scattering Rate and Minimum Conductivity in Graphene
• Macroscopic graphene membranes and their extraordinary stiffness

Cited by in corpus (139)

• Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
• Electronic transport in two dimensional graphene
• Production, properties and potential of graphene
• Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation
• Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing
• Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
• Graphene films with large domain size by a two-step chemical vapor deposition process
• Toward Air-Stable Multilayer Phosphorene Thin-Films and Transistors
• Light-matter interaction in a microcavity-controlled graphene transistor
• Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors
• Tuneable electronic properties in graphene
• Planar carbon nanotube-graphene hybrid films for high-performance broadband photodetectors
• Plasmonics in Dirac systems: from graphene to topological insulators
• High Current Density in Monolayer MoS${}_2$ Doped by AlO${}_x$
• Effective electro-optical modulation with high extinction ratio by a graphene-silicon microring resonator
• Graphene-based, mid-infrared, room-temperature pyroelectric bolometers with ultrahigh temperature coefficient of resistance
• Graphene field effect transistors with ferroelectric gating
• Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films
• Coulomb Drag of Massless Fermions in Graphene
• Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures
• High performance bilayer-graphene Terahertz detectors
• Imaging, simulation, and electrostatic control of power dissipation in graphene devices
• The Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering
• The Integration of High-k Dielectric on Two-Dimensional Crystals by Atomic Layer Deposition
• Electric field induced strong enhancement of electroluminescence in multi-Layer MoS2
• Semiconducting-to-metallic photoconductivity crossover and temperature-dependent Drude weight in graphene
• Piezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure Sensors
• Silicon nitride gate dielectrics and bandgap engineering in graphene layers
• Graphene: Piecing it together
• Impact of Size Effect on Graphene Nanoribbon Transport
• Electrically controlled terahertz magneto-optical phenomena in continuous and patterned graphene
• Dual Gate Graphene FETs with fT of 50 GHz
• Phase-transitions in spin-crossover thin films probed by graphene transport measurements
• Wafer-scale integration of graphene-based photonic devices
• Mobility enhancement and temperature dependence in top-gated single-layer MoS2
• Proximity effect in graphene-topological insulator heterostructures
• UV/Ozone treatment to reduce metal-graphene contact resistance
• HBN-encapsulated, graphene-based room-temperature terahertz receivers with high speed and low noise
• Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)
• Experimental Demonstration of Phase Modulation and Motion Sensing Using Graphene-Integrated Metasurfaces
• Scaling Properties of Polycrystalline Graphene: A Review
• Dielectric Thickness Dependence of Carrier Mobility in Graphene with HfO2 Top Dielectric
• Flexible and Transparent All-Graphene Circuits for Quaternary Digital Modulations
• Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition
• Graphene field effect transistors with Niobium contacts and asymmetric transfer characteristics
• Extrinsic and Intrinsic Charge Trapping at the Graphene/Ferroelectric Interface
• Graphene Transport at High Carrier Densities using a Polymer Electrolyte Gate
• Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides
• Quantitatively Enhanced Reliability and Uniformity of High-κ Dielectrics on Graphene Enabled by Self-Assembled Seeding Layers
• Tuning of Graphene Properties via Controlled Exposure to Electron Beams
• Thermoelectric graphene photodetectors with sub-nanosecond response times at Terahertz frequencies
• Probing top-gated field effect transistor of reduced graphene oxide monolayer made by dielectrophoresis
• Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors
• Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature
• Graphene-Based Non-Boolean Logic Circuits
• Theoretical Study of Corundum as an Ideal Gate Dielectric Material for Graphene Transistors
• Observation of Electrically Tunable van der Waals Interaction in Graphene-Molecule Complex
• Coulomb Drag and High Resistivity Behavior in Double Layer Graphene
• Electron-Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene
• Spin-charge separation of plasmonic excitations in thin topological insulators
• Substrate Gating of Contact Resistance in Graphene Transistors
• Chemical Vapor Deposition-Assembled Graphene Field-Effect Transistor on Hexagonal Boron Nitride
• Plasmonics in topological insulators: Spin-charge separation, the influence of the inversion layer, and phonon-plasmon coupling
• Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at $\nu =0$ in High Magnetic Fields
• Graphene microwave transistors on sapphire substrates
• Edge-channel interferometer at the graphene quantum Hall pn junction
• Terahertz detection with graphene FETs: photothermoelectric and resistive self-mixing contributions to the detector response
• Complementary-like Graphene Logic Gates Controlled by Electrostatic Doping
• A physics based model of gate tunable metal-graphene contact resistance benchmarked against experimental data
• Direct growth of low-doped graphene on Ge/Si(001) surfaces
• Approaching the Intrinsic Bandgap in Suspended High-Mobility Graphene Nanoribbons
• Integrating Functional Oxides with Graphene
• Electronic Spin Transport in Dual-Gated Bilayer Graphene
• UV Light Detection from CdS Nanocrystal Sensitized Graphene Photodetectors at kHz Frequencies
• Magnetotransport Properties of Quasi-Free Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking
• Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement
• Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels
• Quantum Hall effect on centimeter scale chemical vapor deposited graphene films
• Experimental demonstration of tunable graphene hyperbolic metamaterial
• Hysteresis-Free Nanosecond Pulsed Electrical Characterization of Top-Gated Graphene Transistors
• Heat equilibration of integer and fractional quantum Hall edge modes in graphene
• Chiral superfluid states in hybrid graphene heterostructures
• All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts
• Ground state of graphene heterostructures in the presence of random charged impurities
• A Graphene-based Hot Electron Transistor
• Buffer Layer Engineering on Graphene via Various Oxidation Methods for Atomic Layer Deposition
• Transport in Graphene Tunnel Junctions
• Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions
• Role of different scattering mechanisms on the temperature dependence of transport in graphene
• Plasma-enhanced chemical vapor deposition of amorphous Si on graphene
• Graphene FET on diamond for high-frequency electronics
• Electrolyte gate dependent high-frequency measurement of graphene field-effect transistor for sensing applications
• Effects of magnetism and electric field on the energy gap of bilayer graphene nanoflakes
• Large Scale Integration of Graphene Transistors for Potential Applications in the Back End of the Line
• Terahertz photodetection in scalable single-layer-graphene and hexagonal boron nitride heterostructures
• Theory of Landau level mixing in heavily graded graphene p-n junctions
• Quantum nanoconstrictions fabricated by cryo-etching in encapsulated graphene
• Effect of High-k Dielectric Layer on 1/f Noise Behavior in Graphene Field-Effect Transistors
• Electrical Transport Properties of Graphene Nanoribbons Produced from Sonicating Graphite in Solution
• Ballistic Josephson junctions based on CVD graphene
• An extraction method for mobility degradation and contact resistance of graphene transistors
• Nucleation and growth of HfO${}_2$ layers on graphene by CVD
• Phonon-mediated room-temperature quantum Hall transport in graphene
• The optical properties of transferred graphene and the dielectrics grown on it obtained by ellipsometry
• Deposition of thin silicon layers on transferred large area CVD graphene
• Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film
• Epigraphene : epitaxial graphene on silicon carbide
• Versatile sputtering technology for Al2O3 gate insulators on graphene
• Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001)
• Low-frequency noise parameter extraction method for single layer graphene FETs
• Carrier type modulation in current annealed graphene layers
• Ambipolar charge transport in quasi-free-standing monolayer graphene on SiC obtained by gold intercalation
• Density functional theory based study of graphene and dielectric oxide interfaces
• A Fitting Model for Asymmetric I-V Characteristics of Graphene Field-Effect Transistors for Extraction of Intrinsic Mobilities
• Transfer of Graphene with Protective Oxide Layers
• Quantized electron transport through graphene nanoconstrictions
• Numerical quasi-conformal transformations for electron dynamics on strained graphene surfaces
• Non-volatile memory and IR radiation modulators based upon graphene-on-ferroelectric substrate. A review
• Nondestructive real-space imaging of current density distributions in randomly networked conductive nanomaterials
• Theory of carrier transport in graphene double-layer structure with carrier imbalance
• Modeling of electron energy spectra and mobilities in semi-metallic Hg1-xCdxTe quantum wells
• Wafer-scale CMOS-compatible graphene Josephson field-effect transistors
• Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors
• Spotting 2-D Atomic Layers on Aluminum Nitride Thin Films
• Evidence of tunable magnetic coupling in hydrogenated graphene
• Remote Surface Optical Phonon Scattering in Ferroelectric Ba${}_{0.6}$Sr${}_{0.4}$TiO${}_3$ Gated Graphene
• Single-gate electro-optic beam switching metasurfaces
• Multilayer Graphene Nanoribbon and Carbon Nanotube based Floating Gate Transistor for Nonvolatile Flash Memory
• Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures
• Hysteresis-Free High Mobility Graphene Encapsulated in Tungsten Disulfide
• Realization and transport investigation of a single layer-twisted bilayer graphene junction
• Strong localization in a suspended monolayer graphene by intervalley scattering
• Geometrical magnetoresistance effect and mobility in graphene field-effect transistors
• Strong equilibration of Landau levels edge-states at the graphene edge
• Functionalized Graphene in Quantizing Magnetic Field: The case of bunched impurities
• Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices
• Quantum Hall Transport Measurements of Lateral p-n Junctions Formed via Precise Spatial Photodoping of Graphene/hBN Heterostructures
• Ballistic conductivity of graphene channel with p-n junction on ferroelectric domain wall
• Control of polarization hysteresis temperature behavior by interfacial screening in thin ferroelectric films