Graphene-Based Non-Boolean Logic Circuits
arXiv:1308.2931 · doi:10.1063/1.4824828
Abstract
Graphene revealed a number of unique properties beneficial for electronics. However, graphene does not have an energy band-gap, which presents a serious hurdle for its applications in digital logic gates. The efforts to induce a band-gap in graphene via quantum confinement or surface functionalization have not resulted in a breakthrough. Here we show that the negative differential resistance experimentally observed in graphene field-effect transistors of "conventional" design allows for construction of viable non-Boolean computational architectures with the gap-less graphene. The negative differential resistance - observed under certain biasing schemes - is an intrinsic property of graphene resulting from its symmetric band structure. Our atomistic modeling shows that the negative differential resistance appears not only in the drift-diffusion regime but also in the ballistic regime at the nanometer-scale - although the physics changes. The obtained results present a conceptual change in graphene research and indicate an alternative route for graphene's applications in information processing.
15 pages with 5 figures
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- Negative differential resistance in graphene-based ballistic field effect transistor with oblique top gate
- Improved performance of graphene transistors by strain engineering
- Magnetic-flux-driven topological quantum phase transition and manipulation of perfect edge states in graphene tube
- Enhanced architectures for room-temperature reversible logic gates in graphene
- Adsorption and dissociation of diatomic molecules in monolayer -MoSe
- Multipeak Negative Differential Resistance from Interplay between Nonlinear Stark Effect and Double-Branch Current Flow
- 2D Porphyrazine: A New Nanoporous Material
- Scattering of CO from Vacant-MoSe with O Adsorbates: Is CO Formed?