Graphene-on-Sapphire and Graphene-on-Glass: Raman Spectroscopy Study
arXiv:0710.2369 · doi:10.1063/1.2805024
Abstract
The room-temperature Raman signatures from graphene layers on sapphire and glass substrates were compared with those from graphene on GaAs substrate and on the standard Si/SiO2 substrate, which served as a reference. It was found that while G peak of graphene on Si/SiO2 and GaAs is positioned at 1580 cm-1 it is down-shifted by ~5 cm-1 for graphene-on-sapphire (GOS) and, in many cases, splits into doublets for graphene-on-glass (GOG) with the central frequency around 1580 cm-1. The obtained results are important for graphene characterization and its proposed graphene applications in electronic devices.
arXiv commentAccepted for publication in Applied Physics Letters, 9 pages, 3 figures
References in corpus (9)
- Electric Field Effect in Atomically Thin Carbon Films
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- The Raman Fingerprint of Graphene
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Quantum Spin Hall Effect in Graphene
- Spatially Resolved Raman Spectroscopy of Single- and Few-Layer Graphene
- Raman scattering from high frequency phonons in supported n-graphene layer films
- Phase Coherent Transport of Charges in Graphene Quantum Billiard
- Coulomb interacting Dirac fermions in disordered graphene
Cited by in corpus (41)
- The electronic properties of graphene
- Raman spectroscopy of epitaxial graphene on a SiC substrate
- Modification of Graphene Properties due to Electron-Beam Irradiation
- Micro-Raman Spectroscopy of Mechanically Exfoliated Few-Quintuple Layers of Bi(2)Te(3), Bi(2)Se(3) and Sb(2)Te(3) Materials
- Ultraviolet Raman Spectroscopy of Single and Multi-layer Graphene
- Probing Mechanical Properties of Graphene with Raman Spectroscopy
- Crystal Symmetry Breaking in Few-Quintuple Bismuth Telluride Films: Applications in Nanometrology of Topological Insulators
- Graphene-on-Diamond Devices with Enhanced Current-Carrying Capacity: Carbon sp2-on-sp3 Technology
- FeCl3 based Few-Layer Graphene Intercalation Compounds: Single Linear Dispersion Electronic Band Structure and Strong Charge Transfer Doping
- Molecular dynamics simulations of thermal conductivity and spectral phonon relaxation time in suspended and supported graphene
- Low-noise top-gate graphene transistors
- Electrical and Noise Characteristics of Graphene Field-Effect Transistors: Ambient Effects and Noise Sources
- Morphology and flexibility of graphene and few-layer graphene on various substrates
- Growth of Large-Area Graphene Films from Metal-Carbon Melts
- Flicker Noise in Bilayer Graphene Transistors
- Thermal and Electrical Properties of Hybrid Composites with Graphene and Boron Nitride Fillers
- Raman spectroscopic determination of the length, strength, compressibility, Debye temperature, elasticity, and force constant of the C-C bond in graphene
- Tuning of Graphene Properties via Controlled Exposure to Electron Beams
- Graphene-Based Non-Boolean Logic Circuits
- Anomalous Electron Transport in Field-Effect Transistors with Titanium Ditelluride Semimetal Thin-Film Channels
- Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications
- Heating Isotopically Labelled Bernal Stacked Graphene: a Raman Spectroscopy Study
- Stochastic many-body perturbation theory for Moiré states in twisted bilayer phosphorene
- Transfer-free fabrication of graphene transistors
- The impact of hexagonal boron nitride encapsulation on the structural and vibrational properties of few layer black phosphorus
- Silicon-CMOS Compatible In-Situ CCVD Grown Graphene Transistors with Ultra-High On/Off-Current Ratio
- Magneto-Transport Properties of Exfoliated Graphene on GaAs
- Observation of the "Memory Steps" in Graphene at Elevated Temperatures
- Density functional theory based study of graphene and dielectric oxide interfaces
- Transfer-free Grown Bilayer Graphene Transistors for Digital Applications
- Deterministic Covalent Organic Functionalization of Monolayer Graphene with 1,3-Dipolar Cycloaddition Via High Resolution Surface Engineering
- Effect of disorder on the electronic properties of graphene: a theoretical approach
- Thermal Transport in Graphene and Graphene Multilayers
- Review of Thermal Properties of Graphene and Few-Layer Graphene: Applications in Electronics
- Capacitive coupling in hybrid Graphene-GaAs nanostructures
- Study of Black Phosphorus Using Angle-Resolved Polarized Raman Spectroscopy with 442 nm Excitation
- Thermal Dynamics of Graphene Edges Investigated by Polarized Raman Spectroscopy
- Probing charged impurities in suspended graphene using Raman spectroscopy
- Triple-Mode Single-Transistor Graphene Amplifier and Its Applications
- Review of Graphene-based Thermal Polymer Nanocomposites: Current State of the Art and Future Prospects
- Raman spectroscopy and imaging of graphene