Observation of the "Memory Steps" in Graphene at Elevated Temperatures

Abstract

We found that the current-voltage characteristics of the single-layer graphene field-effect transistors exhibit an intriguing feature - an abrupt change of the current near zero gate bias at elevated temperatures T > 500 K. The strength of the effect - referred to as the "memory step" by analogy with the "memory dips" - known phenomenon in electron glasses - depends on the rate of the voltage sweep. The slower the sweep - the more pronounced is the step in the current. Despite differences in examined graphene transistor characteristics, the "memory step" always appears near zero gate bias. The effect is reproducible and preserved after device aging. A similar feature has been previously observed in electronic glasses albeit at cryogenic temperatures and with opposite dependence on the rate of the voltage sweep. The observed "memory step" can be related to the slow relaxation processes in graphene. This new characteristic of electron transport in graphene can be used for applications in high-temperature sensors and switches.

17 manuscript pages

References in corpus (6)

• Modification of Graphene Properties due to Electron-Beam Irradiation
• Graphene-on-Sapphire and Graphene-on-Glass: Raman Spectroscopy Study
• Flicker Noise in Bilayer Graphene Transistors
• Slow conductance relaxations; Distinguishing the Electron Glass from extrinsic mechanisms
• Conductance relaxation in the Electron-Glass; Microwaves versus infra-red response
• Electrical glassy behavior in granular aluminium thin films

Cited by in corpus (5)

• Review of the Low-Frequency 1/f Noise in Graphene Devices
• Mobility-dependent Low-frequency Noise in Graphene Field Effect Transistors
• High-Temperature Performance of MoS2 Thin-Film Transistors: DC and Pulse Current-Voltage Characteristics
• Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications
• Negative Differential Resistance in Carbon-Based Nanostructures