High-Temperature Performance of MoS2 Thin-Film Transistors: DC and Pulse Current-Voltage Characteristics
arXiv:1412.6698 · doi:10.1063/1.4906496
Abstract
The measurements of the high - temperature current - voltage characteristics of MoS2 thin - film transistors show that the devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the DC and pulse measurements shows that the DC sub - linear and super - linear output characteristics of MoS2 thin - films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, an intriguing phenomenon of the "memory step" - a kink in the drain current - occurs at zero gate voltage irrespective of the threshold voltage value. The memory step effect was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The obtained results suggest new applications for MoS2 thin - film transistors in extreme - temperature electronics and sensors.
arXiv comment22 pages, 8 figures
References in corpus (13)
- Atomically thin MoS2: A new direct-gap semiconductor
- Van der Waals heterostructures
- Anomalous Lattice Vibrations of Single and Few-Layer MoS2
- First-principles study of the phonon-limited mobility in n-type single-layer MoS2
- The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
- Low-Frequency 1/f Noise in Molybdenum Disulfide Transistors
- Selective Chemical Vapor Sensing with Few-Layer MoS2 Thin-Film Transistors
- Phonon and Thermal Properties of Exfoliated Tantalum Diselenide Thin Films
- Slow conductance relaxations; Distinguishing the Electron Glass from extrinsic mechanisms
- Conductance relaxation in the Electron-Glass; Microwaves versus infra-red response
- Observation of the "Memory Steps" in Graphene at Elevated Temperatures
- Low frequency noise in chemical vapor deposited MoS2
- Electrical glassy behavior in granular aluminium thin films