Low-Frequency 1/f Noise in Molybdenum Disulfide Transistors

Abstract

We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS2 transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS2 transistors, are 1.5 x 10^19 eV-1cm-3 and 2 x 10^20 eV-1cm-3 for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS2 transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS2 and other van der Waals materials.

18 pages; 5 figures

References in corpus (6)

• Electric Field Effect in Atomically Thin Carbon Films
• Two Dimensional Atomic Crystals
• Anomalous Lattice Vibrations of Single and Few-Layer MoS2
• Integrated Circuits Based on Bilayer MoS2 Transistors
• Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene
• Phonon and Thermal Properties of Exfoliated Tantalum Diselenide Thin Films

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• High-Temperature Performance of MoS2 Thin-Film Transistors: DC and Pulse Current-Voltage Characteristics
• Strong thermal transport along polycrystalline transition metal dichalcogenides revealed by multiscale modelling for MoS2
• Magnonic Interferometric Switch for Multi-Valued Logic Circuits
• Percolative switching in transition metal dichalcogenide field-effect transistors at room temperature
• Charge Neutral MoS2 Field Effect Transistors Through Oxygen Plasma Treatment
• Current Oscillations in Quasi-2D Charge-Density-Wave 1T-TaS2 Devices: Revisiting the "Narrow Band Noise" Concept
• Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics
• Probing defect states in few-layer MoS${}_2$ by conductance fluctuation spectroscopy
• Photodoping-driven crossover in low-frequency noise in MoS2 transistors
• Physics-based bias-dependent compact modeling of 1/f noise in single- to few- layer 2D-FETs
• Flicker Noise in Two-Dimensional Electron Gas
• Amplitude and Phase Noise of Magnons