Graphene Thickness-Graded Transistors with Reduced Low-Frequency 1/f Noise
arXiv:1112.5751 · doi:10.1063/1.3676277
Abstract
We demonstrate graphene thickness-graded transistors with high electron mobility and low 1/f noise (f is a frequency). The device channel is implemented with few-layer graphene with the thickness varied from a single layer in the middle to few-layers at the source and drain contacts. It was found that such devices have electron mobility comparable to the reference single-layer graphene devices while producing lower noise levels. The metal doping of graphene and difference in the electron density of states between the single-layer and few-layer graphene cause the observed noise reduction. The results shed light on the noise origin in graphene.
10 pages, 4 figures
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Cited by in corpus (12)
- Review of the Low-Frequency 1/f Noise in Graphene Devices
- Graphene Versus MoS2: a Short Review
- Low-Frequency 1/f Noise in Molybdenum Disulfide Transistors
- Direct Probing of 1/f Noise Origin with Graphene Multilayers: Surface vs. Volume
- Current crowding mediated large contact noise in graphene field-effect transistors
- Reduction of 1/f Noise in Graphene after Electron-Beam Irradiation
- Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications
- Understanding the Bias Dependence of Low Frequency Noise in Sin-gle Layer Graphene FETs
- Effect of High-k Dielectric Layer on 1/f Noise Behavior in Graphene Field-Effect Transistors
- Velocity Saturation effect on Low Frequency Noise in short channel Single Layer Graphene FETs
- Limits on the Bolometric response of Graphene due to flicker noise
- Graphene-like metallic-on-silicon field effect transistor