Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene

Abstract

Scattering mechanisms in graphene are critical to understanding the limits of signal-to-noise-ratios of unsuspended graphene devices. Here we present the four-probe low frequency noise (1/f) characteristics in back-gated single layer graphene (SLG) and bilayer graphene (BLG) samples. Contrary to the expected noise increase with the resistance, the noise for SLG decreases near the Dirac point, possibly due to the effects of the spatial charge inhomogeneity. For BLG, a similar noise reduction near the Dirac point is observed, but with a different gate dependence of its noise behavior. Some possible reasons for the different noise behavior between SLG and BLG are discussed.

28 pages, 3 figures + 3 supplement figures

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• Effect of High-k Dielectric Layer on 1/f Noise Behavior in Graphene Field-Effect Transistors
• Effect of boron nitride defects and charge inhomogeneity on 1/f noise in encapsulated graphene
• Bias Dependent Variability of Low Frequency Noise in Single Layer Graphene FETs
• Origin of electrical noise near charge neutrality in dual gated graphene device
• Topological Field Theory and Stochastic Dynamics