Bias Dependent Variability of Low Frequency Noise in Single Layer Graphene FETs

Abstract

Low-frequency noise (LFN) variability in graphene transistors (GFETs) is for the first time researched in this work. LFN from an adequate statistical sample of long-channel solution-gated single-layer GFETs is measured in a wide range of operating conditions while a physics-based analytical model is derived that accounts for the bias dependence of LFN variance with remarkable performance. It is theoretically proved and experimentally validated that LFN deviations in GFETs stem from physical mechanisms that generate LFN. Thus, carrier number DN due to trapping/detrapping process and mobility fluctuations Dm which are the main causes of LFN, define its variability likewise as its mean value. DN accounts for an M-shape of normalized LFN variance versus gate bias with a minimum at the charge neutrality point (CNP) as it was the case for normalized LFN mean value while Dm contributes only near the CNP for both variance and mean value. Trap statistical nature is experimentally shown to differ from classical Poisson distribution at silicon-oxide devices, and this is probably caused by electrolyte interface in GFETs under study. Overall, GFET technology development is still in a premature stage which might cause pivotal inconsistencies affecting the scaling laws in GFETs of the same process.

References in corpus (24)

• Electric Field Effect in Atomically Thin Carbon Films
• Graphene: Status and Prospects
• Detection of Individual Gas Molecules Absorbed on Graphene
• Graphene Photonics and Optoelectronics
• Graphene field effect transistors as room-temperature Terahertz detectors
• Review of the Low-Frequency 1/f Noise in Graphene Devices
• Fast and Sensitive Terahertz Detection Using an Antenna-Integrated Graphene pn Junction
• Low-noise top-gate graphene transistors
• Graphene transistors for bioelectronics
• Selective Chemical Vapor Sensing with Few-Layer MoS2 Thin-Film Transistors
• Direct Probing of 1/f Noise Origin with Graphene Multilayers: Surface vs. Volume
• Mobility-dependent Low-frequency Noise in Graphene Field Effect Transistors
• Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene
• Modelling of Statistical Low-Frequency Noise of Deep-Submicron MOSFETs
• Reduction of 1/f Noise in Graphene after Electron-Beam Irradiation
• Explicit drain current, charge and capacitance model of graphene field-effect transistors
• Observation of reduced 1/f noise in Graphene field effect transistors on Boron Nitride substrates
• Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications
• Small-signal model for 2D-material based field-effect transistors targeting radio-frequency applications: the importance of considering non-reciprocal capacitances
• Understanding the Bias Dependence of Low Frequency Noise in Sin-gle Layer Graphene FETs
• Velocity Saturation effect on Low Frequency Noise in short channel Single Layer Graphene FETs
• Charge-Based Compact Model for Bias-Dependent Variability of 1/f Noise in MOSFETs
• Low-frequency noise parameter extraction method for single layer graphene FETs
• Anomalous behavior of 1/f noise in graphene near the charge neutrality point

Cited by in corpus (2)

• Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors
• Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs