Explicit drain current, charge and capacitance model of graphene field-effect transistors

Abstract

I present a compact physics-based model of the drain current, charge and capacitance of graphene field-effect transistors, of relevance for exploration of DC, AC and transient behavior of graphene based circuits. The physical framework is a field-effect model and drift-diffusion carrier transport incorporating saturation velocity effects. First, an explicit model has been derived for the drain current. Using it as a basis, explicit closed-form expressions for the charge and capacitances based on the Ward-Dutton partition scheme, covering continuosly all operation regions. The model is of special interest for analog and radio-frequency applications where bandgap engineering of graphene could be not needed.

18 pages, 5 figures

References in corpus (5)

• Carrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons
• Mobility and Saturation Velocity in Graphene on SiO2
• Ultimate RF Performance Potential of Carbon Electronics
• Explicit drain-current model of graphene field-effect transistors targeting analog and radio-frequency applications
• A current-voltage model for Schottky-barrier graphene based transistors

Cited by in corpus (14)

• Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors
• Role of MgO barriers for spin and charge transport in Co/MgO/graphene non-local spin-valve devices
• Large-Signal Model of Graphene Field-Effect Transistors -- Part I: Compact Modeling of GFET Intrinsic Capacitances
• A review for compact model of graphene field-effect transistors
• Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors
• Understanding the Bias Dependence of Low Frequency Noise in Sin-gle Layer Graphene FETs
• Velocity Saturation effect on Low Frequency Noise in short channel Single Layer Graphene FETs
• Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes
• Impact of graphene polycrystallinity on the performance of graphene field-effect transistors
• Non-quasi-static effects in graphene field-effect transistors under high-frequency operation
• Graphene on Silicon Hybrid Field-Effect Transistors
• Bias Dependent Variability of Low Frequency Noise in Single Layer Graphene FETs
• Large-signal model of the bilayer graphene field-effect transistor targeting radio-frequency applications: theory versus experiment
• Input referred low-frequency noise analysis for single-layer graphene FETs