Carrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons

Abstract

In this work, fundamental results for carrier statistics in graphene 2-dimensional sheets and nanoscale ribbons are derived. Though the behavior of intrinsic carrier densities in 2d graphene sheets is found to differ drastically from traditional semiconductors, very narrow (sub-10 nm) ribbons are found to be similar to traditional narrow-gap semiconductors. The quantum capacitance, an important parameter in the electrostatic design of devices, is derived for both 2d graphene sheets and nanoribbons.

3 pages, 3 figures, submitted to Applied Physics Letters

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• Two-Dimensional Gas of Massless Dirac Fermions in Graphene
• Energy Band Gap Engineering of Graphene Nanoribbons
• A Graphene Field-Effect Device

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