Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors

Abstract

In this work, the consequence of the high band-edge density of states on the carrier statistics and quantum capacitance in transition metal dichalcogenide two-dimensional semiconductor devices is explored. The study questions the validity of commonly used expressions for extracting carrier densities and field-effect mobilities from the transfer characteristics of transistors with such channel materials. By comparison to experimental data, a new method for the accurate extraction of carrier densities and mobilities is outlined. The work thus highlights a fundamental difference between these materials and traditional semiconductors that must be considered in future experimental measurements.

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Cited by in corpus (27)

• Electronic Transport in Two-Dimensional Materials
• High Current Density in Monolayer MoS${}_2$ Doped by AlO${}_x$
• Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors
• First-principles theory of field-effect doping in transition-metal dichalcogenides: Structural properties, electronic structure, Hall coefficient, and electrical conductivity
• Contact Engineering High Performance n-Type MoTe2 Transistors
• Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs described with Band Broadening
• Optimizing the Stability of FETs Based on Two-Dimensional Materials by Fermi Level Tuning
• Full energy spectra of interface state densities for n- and p-type MoS2 field-effect transistors
• Accumulation-mode two-dimensional field-effect transistor: Operation mechanism and thickness scaling rule
• Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor
• Electrically inert h-BN/bilayer graphene interface in all-2D-heterostructure FETs
• Reproducible Performance Improvements to Monolayer MoS2 Transistors through Exposed Material Forming Gas Annealing
• How do Quantum Effects Influence the Capacitance and Carrier Density of Monolayer MoS${}_2$ Transistors?
• Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances
• Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition
• Explicit gain equations for hybrid graphene-quantum-dot photodetectors
• Understanding interface properties in 2D heterostructure FETs
• The 2D pn Junction Driven Out-of-Equilibrium
• Quantum Capacitance-Limited MoS2 Biosensors Enable Remote Label-Free Enzyme Measurements
• Compact Modeling of pH-Sensitive FETs Based on Two-Dimensional Semiconductors
• Quantum-mechanical effect in atomically thin MoS2 FET
• Blocking transition of interface traps in MoS${}_2$-on-SiO${}_2$ FETs
• Sub-60 mV/decade switching in a metal-insulator-metal-insulator-semiconductor transistor without ferroelectric component
• Transistors based on Novel 2-D Monolayer Semiconductors Bi2O2Se, InSe, and MoSi2N4 for Enhanced Logic Density Scaling
• Reducing non-linear effects in Kelvin Probe Force Microscopy of back-gated 2D semiconductors
• Theory of cross quantum capacitance
• Theory and computation of Hall scattering factor in graphene